Plasticity of indium antimonide between -176 and 400 °C under hydrostatic pressure. Part I: Macroscopic aspects of the deformation
Identifieur interne : 003A95 ( Main/Repository ); précédent : 003A94; suivant : 003A96Plasticity of indium antimonide between -176 and 400 °C under hydrostatic pressure. Part I: Macroscopic aspects of the deformation
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Abstract
Indium antimonide (InSb) single crystals have been plastically deformed between -176 and 400 °C, i.e. below and above the brittle-to-ductile transition temperature situated around 150-160 °C, via the use of microindentation below room temperature (RT) and the Paterson press (compression under gaseous pressure) above RT. The evolution of the macroscopic mechanical data (hardness and critical resolved shear stress) with temperature suggests the existence of three deformation regimes with transitions at Ttr1 = 150 °C and Ttr2 = 20 °C. Ttr1 coincides with the brittle-to-ductile temperature, while Ttr2 may coincide with a transition in the nature of dislocations with dislocations propagating in the glide set above Ttr2 while moving in the shuffle set below Ttr2.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Plasticity of indium antimonide between -176 and 400 °C under hydrostatic pressure. Part I: Macroscopic aspects of the deformation</title><author><name sortKey="Kedjar, B" uniqKey="Kedjar B">B. Kedjar</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>PHYMAT, University of Poitiers (UMR CNRS 6630), SP2MI</s1><s2>86962 Futuroscope</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Poitou-Charentes</region><settlement type="city">Futuroscope</settlement></placeName></affiliation></author><author><name sortKey="Thilly, L" uniqKey="Thilly L">L. Thilly</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>PHYMAT, University of Poitiers (UMR CNRS 6630), SP2MI</s1><s2>86962 Futuroscope</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Poitou-Charentes</region><settlement type="city">Futuroscope</settlement></placeName></affiliation></author><author><name sortKey="Demenet, J L" uniqKey="Demenet J">J.-L. Demenet</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>PHYMAT, University of Poitiers (UMR CNRS 6630), SP2MI</s1><s2>86962 Futuroscope</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Poitou-Charentes</region><settlement type="city">Futuroscope</settlement></placeName></affiliation></author><author><name sortKey="Rabier, J" uniqKey="Rabier J">J. Rabier</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>PHYMAT, University of Poitiers (UMR CNRS 6630), SP2MI</s1><s2>86962 Futuroscope</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Poitou-Charentes</region><settlement type="city">Futuroscope</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0322030</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0322030 INIST</idno><idno type="RBID">Pascal:10-0322030</idno><idno type="wicri:Area/Main/Corpus">004246</idno><idno type="wicri:Area/Main/Repository">003A95</idno></publicationStmt><seriesStmt><idno type="ISSN">1359-6454</idno><title level="j" type="abbreviated">Acta mater.</title><title level="j" type="main">Acta materialia</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Deformation</term><term>Hydrostatic pressure</term><term>Indentation</term><term>Plasticity</term><term>Semiconductor materials</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Plasticité</term><term>Pression hydrostatique</term><term>Déformation</term><term>Semiconducteur</term><term>Indentation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium antimonide (InSb) single crystals have been plastically deformed between -176 and 400 °C, i.e. below and above the brittle-to-ductile transition temperature situated around 150-160 °C, via the use of microindentation below room temperature (RT) and the Paterson press (compression under gaseous pressure) above RT. The evolution of the macroscopic mechanical data (hardness and critical resolved shear stress) with temperature suggests the existence of three deformation regimes with transitions at T<sub>tr1</sub> = 150 °C and T<sub>tr2</sub> = 20 °C. T<sub>tr1</sub> coincides with the brittle-to-ductile temperature, while T<sub>tr2</sub> may coincide with a transition in the nature of dislocations with dislocations propagating in the glide set above T<sub>tr2</sub> while moving in the shuffle set below T<sub>tr2</sub>.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1359-6454</s0></fA01><fA03 i2="1"><s0>Acta mater.</s0></fA03><fA05><s2>58</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Plasticity of indium antimonide between -176 and 400 °C under hydrostatic pressure. Part I: Macroscopic aspects of the deformation</s1></fA08><fA11 i1="01" i2="1"><s1>KEDJAR (B.)</s1></fA11><fA11 i1="02" i2="1"><s1>THILLY (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>DEMENET (J.-L.)</s1></fA11><fA11 i1="04" i2="1"><s1>RABIER (J.)</s1></fA11><fA14 i1="01"><s1>PHYMAT, University of Poitiers (UMR CNRS 6630), SP2MI</s1><s2>86962 Futuroscope</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>1418-1425</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>7423</s2><s5>354000181473310230</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>30 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0322030</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Acta materialia</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium antimonide (InSb) single crystals have been plastically deformed between -176 and 400 °C, i.e. below and above the brittle-to-ductile transition temperature situated around 150-160 °C, via the use of microindentation below room temperature (RT) and the Paterson press (compression under gaseous pressure) above RT. The evolution of the macroscopic mechanical data (hardness and critical resolved shear stress) with temperature suggests the existence of three deformation regimes with transitions at T<sub>tr1</sub> = 150 °C and T<sub>tr2</sub> = 20 °C. T<sub>tr1</sub> coincides with the brittle-to-ductile temperature, while T<sub>tr2</sub> may coincide with a transition in the nature of dislocations with dislocations propagating in the glide set above T<sub>tr2</sub> while moving in the shuffle set below T<sub>tr2</sub>.</s0></fC01><fC02 i1="01" i2="X"><s0>001D11A</s0></fC02><fC02 i1="02" i2="X"><s0>001D11G</s0></fC02><fC02 i1="03" i2="X"><s0>240</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Plasticité</s0><s5>55</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Plasticity</s0><s5>55</s5></fC03><fC03 i1="01" i2="X" l="GER"><s0>Plastizitaet</s0><s5>55</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Plasticidad</s0><s5>55</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Pression hydrostatique</s0><s5>56</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Hydrostatic pressure</s0><s5>56</s5></fC03><fC03 i1="02" i2="X" l="GER"><s0>Hydrostatischer Druck</s0><s5>56</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Presión hidrostática</s0><s5>56</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Déformation</s0><s5>57</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Deformation</s0><s5>57</s5></fC03><fC03 i1="03" i2="X" l="GER"><s0>Verformung</s0><s5>57</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Deformación</s0><s5>57</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Semiconducteur</s0><s5>58</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Semiconductor materials</s0><s5>58</s5></fC03><fC03 i1="04" i2="X" l="GER"><s0>Halbleiter</s0><s5>58</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Semiconductor(material)</s0><s5>58</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Indentation</s0><s5>59</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Indentation</s0><s5>59</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Indentación</s0><s5>59</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Propriété mécanique</s0><s5>74</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>Mechanical properties</s0><s5>74</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Propiedad mecánica</s0><s5>74</s5></fC07><fN21><s1>207</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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